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Enhancement Mode Field Effect Transistor with Drain Field Plate

Engineering & Physical Sciences
Materials
Nanomaterials
Semiconductors, MEMS & Nanotechnology
College
College of Engineering (COE)
Researchers
Rajan, Siddharth
Bajaj, Sanyam
Licensing Manager
Smith, Richard
614-688-3639
smith.12123@osu.edu

TS-015027 — A III-nitride enhancement-mode field effect transistor with an improved electric field profile for enhanced performance.

Gallium nitride (GaN) power semiconductors have higher voltages, increased switching frequencies, higher power densities, and greater power efficiencies than devices that rely on silicon power conductors. For these reasons, GaN is quickly replacing silicon for power semiconductor applications. Tho…

The Need

Gallium nitride (GaN) power semiconductors have higher voltages, increased switching frequencies, higher power densities, and greater power efficiencies than devices that rely on silicon power conductors. For these reasons, GaN is quickly replacing silicon for power semiconductor applications. Though these devices work well at medium voltages, they need to be modified to function in higher voltage applications. When modified by a p-type buffer in n-channel field effect transistors (FETs), a high operation electric field forms towards the drain contact. To enhance the performance of nitride FETs, this electric field needs to be reduced.

The Technology

The Ohio State University researchers, led by Dr. Siddharth Rajan, have developed a method for improving the electric field profile of nitride enhancement mode (E-mode) field effect transistors (FETs). By creating a drain field plate, the peak electric field at the drain edge is reduced, and the breakdown characteristics of the FET are improved. These field plates can be stacked over the drain contact and separated by dielectric layers.

Commercial Applications

  • Materials Engineering
  • Powered Electronics
  • GaN Power Devices
  • Power Switching
  • Automobiles

Benefits/ Advantages

  • Increased efficiency
  • Shape of the drain field plates can be engineered to improve the electric field in the channels of the FET devices
  • Improves the performance of nitride E-mode FETs and to vastly increase the efficiency of FETs