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Method for selective area doping of Gallium Nitride

College
College of Engineering (COE)
Researchers
Rajan, Siddharth
Chandrasekar, Hareesh
Rahman, Mohammad Wahidur "Wahidur"
Licensing Manager
Hong, Dongsung Hong.923@osu.edu

T2020-244 A method of selectively obtaining n- and p-type regions from the same III-Nitride layer deposited on a substrate without using diffusion or ion-implantation techniques.

The Need

According to IBIS World Reports, manufacturers of electronic components will likely refocus their production away from silicon-based products to wide bandgap (WBG) semiconductors, which are made of materials that have a wider bandgap than silicon. A bandgap, or energy gap, denotes the energy difference between the top of the valence band and the bottom of the conduction band. Materials such as zinc oxide and gallium nitride (GaN) have a bandgap energy levels higher than silicon, which facilitates the production of electronic inputs that are smaller, faster and more energy efficient. The total market for these products is expected to grow to 57 billion by 2025.

Specifically, the realization of several device topologies requires selective area doping of semiconductors. Currently selective area doping of GaN and related semiconductors is very challenging, and this has prevented the realization of key device structures, including high threshold voltage transistors and vertical transistors.

The Technology

Rajan and his colleagues at OSU have developed a method to realize laterally patterned n-type and p-type regions without implantation, high-temperature annealing or regrowth processes.

Commercial Applications

  • High voltage transistors
  • Electrical components
    • More efficient and robust than traditional silicon

Benfits/Advantages

  • No diffusion or ion-implantation
  • Creation of n/p-type areas from a single GaN layer
  • Larger bandwidth

Research Interests

Dr. Rajan is an Associate Professor with a joint appointment in the Departments of Electrical and Computer Engineering and Materials Science and Engineering at The Ohio State University. He received his BE from the Birla Institute of Technology and Science, Pilani, India in 2001 and his PhD from the University of California, Santa Barbara in 2006. He previously held research positions at the University of California, Santa Barbara and General Electric Global Research. He is co-author of over 40 journal publications.