Method for Utilizing Tunnel Junction in the Device Integration of Transistor on Light-Emitting Diode
T2020-314 This device utilizes a tunnel junction on top of a light-emitting diode (LED) to enable direct integration of a transistor on top of the tunnel junction.
Faster and more efficient ways to communicate are at the forefront of valuable technologies that are being developed. The majority of us are connected to satellites or WiFi for the most part of every day. Li-Fi (short for light fidelity) is wireless communication technology which utilizes light to transmit data and position between devices, and is magnitudes faster than traditional WiFi and also has the benefit of being able to work in locations otherwise susceptible to electromagnetic interference.
Micro-LED arrays are of interest for applications in LiFi data transmission. There has been interest in using micro-LED arrays for data transmission rates which are orders of magnitude higher than currently available technologies such as WiFi. Researchers at Ohio State have developed a device which utilizes a tunnel junction on top of a light-emitting diode (LED) to enable direct integration of a transistor on top of the tunnel junction. The transistor is connected electrically to the LED via the tunnel junction. This allows switching of the LED between the on and off states utilizing the transistor as an integrated control switch. The resultant design is an array of individually addressable micro-LEDs which can be fabricated by directly integrating the control logic device (the transistor) with the micro-LED by utilizing the tunnel junction enabled design.
This would reduce the complexity of current micro-LED array fabrication processes by removing extra steps involved in the process, such as deposition and alignment of thin film transistors fabricated on Indium Gallium Zinc Oxide deposited on top of the micro-LED array.
- Information Technologies
- Navigation (planes, cars, public transport)
- Efficienct design
Siddharth Rajan works at Ohio State's Department of Computer and Electrical Engineering researching the areas of nano-scale semiconductor devices, molecular beam epitaxy, and III-nitride semiconductors. He received his Ph.D. in 2006 from the University of California - Santa Barbara.