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Wide bandgap transistor for high temperature operation

College
College of Engineering (COE)
Researchers
Rajan, Siddharth
Bajaj, Sanyam
Licensing Manager
Wohlgamuth, Christopher
(614)-247-8331
wohlgamuth.5@osu.edu

TS-038416 — A novel semiconductor device that inhibits contact degredation in extreme environments for a variety of applications.

Silicon semiconductors have traditionally been used in the field of power electronics for solid-state electrical conversion, control, and processing of electric power. Wide bandgap (WBG) semiconductors have the capability to operate at higher voltages, temperatures, and switching frequencies with …

The Need

Silicon semiconductors have traditionally been used in the field of power electronics for solid-state electrical conversion, control, and processing of electric power. Wide bandgap (WBG) semiconductors have the capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies compared to existing Si devices. These characteristics not only result in fewer losses but enables significantly reduced volume, contributing to overall lower system costs. Two major WBG materials with the potential to allow significant advances in power electronics are silicon carbide (SiC) and gallium nitride (GaN). Although GaN-based high electron mobility transistors (HEMTs) have shown excellent performance and negligible degradation up to ambient temperatures of 300°C, there are severe challenges related to gate and dielectric degradation beyond such temperatures.

The Technology

Researchers at The Ohio State University, led by Dr. Siddharth Ranjan, have developed a novel AlGaN transistor design for high temperature operation. This semiconductor device consists of all-AlGaN layers to provide extreme temperature operation with ultra-wide bandgap and low electron affinity, resulting in large Schottky barriers. In addition, this device that uses only refractory metals as ohmic and Schottky contacts, would provide negligible degradation of contacts at very high temperatures.

Commercial Applications

  • Renewable Energy Generation and Storage
  • Hybrid and Electric Vehicles
  • Radio Frequency Amplifiers
  • Solid State Lighting

Benefits/Advantages

  • The use of only refractory metals as ohmic and Schottky contacts provides negligible degradation of contacts at very high temperatures
  • The device uses minimum contact process steps